semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk characteristic test conditions min. typ. max. unit prelim. 5/94 bv dss i d(on) r ds(on) i dss i gss v gs(th) v dss i d i dm v gs p d t j , t stg t l 123 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) 3.56 (0.140) 3.81 (0.150) 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 0.64 (0.025) 0.89 (0.035) 3.05 (0.120) bsc 2.54 (0.100) bsc dia. 12.07 (0.500) 19.05 (0.750) dia. to?257 package outline. dimensions in mm (inches) drain ? source voltage continuous drain current pulsed drain current 1 gate ? source voltage total power dissipation @ t case = 25c linear derating factor operating and storage junction temperature range lead temperature : 0.063? from case for 10 sec. v gs = 0v , i d = 250 m a v ds > i d(on) x r ds(on) max v gs = 10v v gs =10v , i d = 0.5 i d [cont.] v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 1.0ma n?channel enhancement mode high voltage isolated power mosfets 1000 3.0 12 30 100 0.8 ?55 to 150 300 v a a v w w / c c drain ? source breakdown voltage on state drain current 2 drain ? source on state resistance 2 zero gate voltage drain current (v gs = 0v) gate ? source leakage current gate threshold voltage 1000 3.0 4.20 250 1000 100 24 v a w m a na v absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% static electrical ratings (t case = 25c unless otherwise stated) SML1004R2GXN lab seme v dss 1000v i d(cont) 3.0a r ds(on) 4.20 w w w w 4th generation mosfet pin 1 gate pin 2 drain pin 3 source pinout same as to?220 package.
semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk SML1004R2GXN characteristic test conditions min. typ. max. unit c dc c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 3.0 12 1.3 150 290 580 0.8 1.65 3.3 prelim. 5/94 i s i sm v sd t rr q rr v gs = 0v , i s = ? i d [cont.] i s = ? i d [cont.] dl s / dt = 100a/ m s continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic test conditions min. typ. max. unit 100 100 12 soa1 soa2 i lm safe operating area , t = 1 sec safe operating area , t = 1 sec inductive current clamped w a characteristic min. typ. max. unit 1.20 80 r q jc r q ja junction to case junction to ambient c/w dynamic characteristics source ? drain diode ratings and characteristics safe operating area characteristics thermal characteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see mil?std?750 method 3471 drain to case capacitance input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn-off delay time fall time f = 1mhz v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.8 w pf pf nc ns 812 805 950 115 160 37 60 35 55 4.3 7 18 27 10 20 12 24 33 50 16 32 lab seme caution ? electrostatic sensitive devices. anti-static procedures must be followed. v ds = 0.4v dss , i ds = p d / 0.4v dss v ds = p d / i d [cont.] , i ds = i d [cont.]
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